Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1−xN ultraviolet photodetector

T. Li; J.C. Carrano; C.J. Eiting; P.A. Grudowski; D.J.H. Lambert; H.K. Kwon; R.D. Dupuis; J.C. Campbell; R.T. Tober; R.T. Tober

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CME6

Design of a resonant-cavity-enhanced p-i-n GaN/Al_xGa_1−xN ultraviolet photodetector

T. Li, J.C. Carrano, C.J. Eiting, P.A. Grudowski, D.J.H. Lambert, H.K. Kwon, R.D. Dupuis, J.C. Campbell, and R.T. Tober

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

From the session
Adaptive Optics/Compound Semiconductor Detectors (CME)

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T. Li, J. C. Carrano, C. J. Eiting, P. A. Grudowski, D. J. H. Lambert, H. K. Kwon, R. D. Dupuis, J. C. Campbell, and R. T. Tober, "Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1−xN ultraviolet photodetector," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CME6.

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Abstract

The Al_xGa_1−xN material system is well suited as a photodetector material in the ultra-violet (UV) spectrum (from 200 to 365 nm).

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