Low threshold (8 mA) 1.3-μm CW lasing of InGaAs/InAs quantum dots at room temperature

K. Mukai; Y. Nakata; K. Otsubo; M. Sugawara; N. Yokoyama; H. Ishikawa

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CPD18

Low threshold (8 mA) 1.3-μm CW lasing of InGaAs/InAs quantum dots at room temperature

K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "Low threshold (8 mA) 1.3-μm CW lasing of InGaAs/InAs quantum dots at room temperature," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CPD18.

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Abstract

The performance of actual quantum-dot lasers are recently drastically advanced close to that of quantum-well lasers.

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