First demonstration of high power InAsxSby(P)1−x−y/InAszSb1−z electrical injection lasers diodes emitting between 4.0 and 4.8 μm

B. Lane; M. Razeghi

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CThE5

First demonstration of high power InAs_xSb_y(P)_1−x−y/InAs_zSb_1−z electrical injection lasers diodes emitting between 4.0 and 4.8 μm

B. Lane and M. Razeghi

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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Mid-Infrared Lasers (CThE)

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B. Lane and M. Razeghi, "First demonstration of high power InAsxSby(P)1−x−y/InAszSb1−z electrical injection lasers diodes emitting between 4.0 and 4.8 μm," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CThE5.

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Abstract

Mid-infrared laser diodes emitting at 3 to 5 μm have potential applications in high resolution gas spectroscopy, free space communications, low loss fiber optic communication and military counter systems.

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