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Conferences > CLEO > 1999 > CThE > CThE6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CThE6

Mid-infrared laser diode active region based on type-II broken gap quantum wells

J.T. Olesberg, M.E. Flatté, P.S. Day, E.M. Shaw, D.J. Magarrell, L. Zhang, S.A. Anson, T.C. Hasenberg, T.F. Boggess, and C.H. Grein

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Abstract

We describe a mid-infrared laser diode active region based on type-II GalnSb/InAs quantum wells. The structure is designed for efficient electrical injection from the barriers.

© 1999 Optical Society of America

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