Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuK41

Wafer-bonded InGaAIP/AuBe/glass light-emitting diodes

Not Accessible

Your library or personal account may give you access

Abstract

High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems.

© 1999 Optical Society of America

PDF Article
More Like This
GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate

Keiichi Matsumoto, Makoto Takasu, Yoshinori Kanaya, Junya Kishikawa, and Kazuhiko Shimomura
SF2G.5 CLEO: Science and Innovations (CLEO:S&I) 2015

Effect of band structure modification on the output characteristics of AIGalnP light emitting diodes

D. Patel, J.M. Pikal, L. Miao, C.S. Menoni, K.J. Thomas, F.A. Kish, and M.R. Hueschen
CTuK54 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Long wavelength graded bandgap light emitting diodes fabricated using a laser annealing process

O. P. Kowalski, S. D. McDougall, J. H. Marsh, and J. S. Aitchison
CTuK40 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved