Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1999 > CTuK > CTuK54
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuK54

Effect of band structure modification on the output characteristics of AIGalnP light emitting diodes

D. Patel, J.M. Pikal, L. Miao, C.S. Menoni, K.J. Thomas, F.A. Kish, and M.R. Hueschen

Not Accessible

Your library or personal account may give you access

Abstract

Visible light emitting diodes (LEDs) based on the AlGaInP alloy system are very efficient in the 630-590 nm wavelength region compared with conventional light sources.

© 1999 Optical Society of America

PDF Article
More Like This
Wafer-bonded InGaAIP/AuBe/glass light-emitting diodes

R. H. Horng, D. S. Wuu, H. W. Tseng, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin
CTuK41 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Long wavelength graded bandgap light emitting diodes fabricated using a laser annealing process

O. P. Kowalski, S. D. McDougall, J. H. Marsh, and J. S. Aitchison
CTuK40 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Self-pulsation 630 nm-band tensile strained MQW AIGalnP laser diodes

T. Ikegami, Y. Bessho, R. Hiroyama, H. Kase, S. Honda, M. Shono, K. Yodoshi, T. Yamaguchi, and T. Niina
CThB5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use