Tunable semiconductor laser device based on piezoelectric heterostructures

V. Ortiz; N.T. Pelekanos; Guido Mula; Le Si Dang; Le Si Dang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CTuK65

Tunable semiconductor laser device based on piezoelectric heterostructures

V. Ortiz, N.T. Pelekanos, Guido Mula, and Le Si Dang

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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V. Ortiz, N. T. Pelekanos, G. Mula, and L. S. Dang, "Tunable semiconductor laser device based on piezoelectric heterostructures," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CTuK65.

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Abstract

The tuning of a semiconductor laser diode (LD) is usually achieved by tuning a dispersive intracavity element, such as a grating or a distributed Bragg reflector, through the LD gain spectrum.

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