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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CTuT4

Annealing of low-temperature grown semiconductors: material optimization for ultrafast all-optical gating

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Abstract

Ultrafast all-optical gating with compact semiconductor devices1,1 requires materials with high absorption modulation, sub-picosecond response times, and low absorption in the fully saturated state (low nonsaturable losses).

© 1999 Optical Society of America

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