Structural asymmetry effects in the optical gain of indium gallium nitride quantum wells

L.-H. Peng; Y.-C. Hsu; C.-W. Chuang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CTuU2

Structural asymmetry effects in the optical gain of indium gallium nitride quantum wells

L.-H. Peng, Y.-C. Hsu, and C.-W. Chuang

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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L. -. Peng, Y. -. Hsu, and C. -. Chuang, "Structural asymmetry effects in the optical gain of indium gallium nitride quantum wells," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CTuU2.

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Abstract

Recent progress in the epitaxial growth and device process on wide bandgap III-V nitrides have made possible the indium gallium nitride (InGaN) quantum well (QW) emitters spanning the spectral range from amber to violet.¹

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