Photorefraction in CdTe:Ge enhanced by auxiliary illumination

Serguey Odoulov; Konstantin Shcherbin; Bernard Briat; François Ramaz; Bouazza Farid

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CWF42

Photorefraction in CdTe:Ge enhanced by auxiliary illumination

Serguey Odoulov, Konstantin Shcherbin, Bernard Briat, François Ramaz, and Bouazza Farid

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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S. Odoulov, K. Shcherbin, B. Briat, F. Ramaz, and B. Farid, "Photorefraction in CdTe:Ge enhanced by auxiliary illumination," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CWF42.

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Abstract

CdTe:Ge ensures the largest two-beam coupling gain factor among all photorefractive semiconductors with no electric field.¹

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