Abstract
Semiconductor materials having picosecond carrier lifetimes are extremely attractive for use in >100 Gbit/s all-optical switching/gating devices. Passive switching devices made of these materials can be compact (sub-millimeter), better suited for monolithic integration, and have multiple ports with add/ drop capabilities.
© 1999 Optical Society of America
PDF ArticleMore Like This
S. D. Benjamin, Li Quan, J. E. Ehrlich, P. W. B. Smith, B. J. Robinson, and D. A. Thompson
CTuL11 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996
Li Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson
JWA8 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997
T. S. Sosnowski, T. B. Norris, H. H. Wang, P. Grenier, J. F. Whitaker, and C. Y. Sung
UG8 Ultrafast Electronics and Optoelectronics (UEO) 1997