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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper CWL2

Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics

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Abstract

Semiconductor materials having picosecond carrier lifetimes are extremely attractive for use in >100 Gbit/s all-optical switching/gating devices. Passive switching devices made of these materials can be compact (sub-millimeter), better suited for monolithic integration, and have multiple ports with add/ drop capabilities.

© 1999 Optical Society of America

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