Photoconductive detection of THz radiation using two-step photoabsorption in LT-GaAs

M. Tani; M. Tani; K.-S. Lee; X.-C. Zhang

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CThR6

Photoconductive detection of THz radiation using two-step photoabsorption in LT-GaAs

M. Tani, K.-S. Lee, and X.-C. Zhang

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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Thz Imaging, Ranging, and Applications (CThR)

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M. Tani, K. -. Lee, and X. -. Zhang, "Photoconductive detection of THz radiation using two-step photoabsorption in LT-GaAs," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CThR6.

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Abstract

Low-temperature-grown GaAs (LT-GaAs) is the most widely used photoconductive (PC) material in the PC emitter or detector for THz radiation because of its unique properties, such as ultrashort carrier lifetime, large resistivity, and relatively good carrier mobility.

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