Abstract
A terahertz (THz) field may he generated at the surface of a semiconductor by surface field photoconduction (SEP). In this process, photogenerated carriers are accelerated by the built-in surface field within the depletion region and their coherent motion results in the cooperative emission of THz radiation. A significant enhancement in the THz power generated by SFP has been observed when a magnetic field is applied to InAs.1,2
© 2000 Optical Society of America
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