Abstract
Terahertz radiation from semiconductor surfaces irradiated with ultrashort optical pulses has been intensively studied as a novel radiation source. The frequency shift of the THz radiation spectrum front InSb was first reported by Hu et al.1 Howells et al. studied the temperature dependence of the THz radiation from InSb to explore the possibility of controlling the radiation spectrum.2
© 2000 Optical Society of America
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