Experimental and theoretical study of the influence of quantum barrier thickness on the carrier distribution in InGaAsP MQW lasers

Michael J. Hamp; Daniel T. Cassidy

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CTuA50

Experimental and theoretical study of the influence of quantum barrier thickness on the carrier distribution in InGaAsP MQW lasers

Michael J. Hamp and Daniel T. Cassidy

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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M. J. Hamp and D. T. Cassidy, "Experimental and theoretical study of the influence of quantum barrier thickness on the carrier distribution in InGaAsP MQW lasers," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CTuA50.

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Abstract

The distribution of carriers among the wells of MQW lasers can profoundly affect performance.^1,2

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