Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

J. Hader; S.W. Koch; J.V. Moloney; J.V. Moloney; E.P. O’Reilly; E.P. O’Reilly

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CTuA55

Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

J. Hader, S.W. Koch, J.V. Moloney, and E.P. O’Reilly

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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J. Hader, S. W. Koch, J. V. Moloney, and E. P. O’Reilly, "Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CTuA55.

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Abstract

In recent years, the unusually strong bandgap reduction of GaAs through the replacement of a few percent of arsenic atoms by nitrogen has been successfully explained for bulk semiconductors.

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