Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CTuA58

Polarization-dependence In mufti-quantum well lasers and semiconductor optical amplifiers: Probing interwell transport effects

Not Accessible

Your library or personal account may give you access

Abstract

The advantages and opportunities associated with the use of multiple quantum wells (MQWs) in semiconductor laser and semiconductor optical amplifier (SOA) active regions are accompanied by challenges.

© 2000 Optical Society of America

PDF Article
More Like This
Interwell carrier transport in InGaAsP quantum well lasers: effect of valence band barrier height

Christofer Silfvenius, Saulius Marcinkevičius, and Gunnar Landgren
CWL4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

The Effect of Transport on High-Speed Dynamic Performance of Quantum-Well Semiconductor Optical Amplifiers

P. J. Annetts, M. Asghari, I.H. White, J.E.A. Whiteaway, and A. J. Collar
CTuH6 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996

Interwell Carrier Transport In InGaAsP/InP Quantum Well Laser Structures

S Marcinkevičius, K. Fröjdh, U Olin, C Silfvenius, B Stålnacke, and G Landgren
CThI24 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved