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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CTuA60

Sensitivity of the line width enhancement factor to structure and threshold level in strained semiconductor lasers

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Abstract

The carrier-induced coupling of the gain change to the refractive index change in the active region of a semiconductor laser is described by the linewidth enhancement factor (or α-parameter).1

© 2000 Optical Society of America

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