Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWB2

Characteristics of two stimulated emission peaks in InGaN/GaN multiple quantum well structures

Not Accessible

Your library or personal account may give you access

Abstract

Indium aggregation and phase separation due to the lattice mismatch between GaN and InN lead to the formation of localized states.

© 2000 Optical Society of America

PDF Article
More Like This
Formation of Quasi-regular Quantum Dots with Post-growth Thermal Annealing and Their Optical Characteristics in InGaN/GaN Quantum Wells

Yen-Sheng Lin, Kung-Jeng Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, C.C. Yang, Hui-Wen Chuang, Cheng-Ta Kuo, Jian-Shihn Tsang, and Thomas E. Weirich
CFG6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002

Optical and Material Studies of Indium Compositional Fluctuations in InGaN/GaN Quantum Well Structures

Shih-Wei Feng, Yen-Sheng Lin, Chi-Chih Liao, Kung-Jeng Ma, C. C. Yang, Chang-Cheng Chou, Chia-Ming Lee, and Jen-Inn Chyi
CMC3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Thermionic emission dominated carrier dynamics in InGaN/GaN multiple-quantum-wells

Chi-Kuang Sun, Jian-Chin Liang, Xiang-Yang Yu, Amber Abare, and Steven P. DenBaars
QFD6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.