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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWB5

Mapping piezoelectric field distribution in InGaN/GaN multiple-quantum-wells by scanning second-harmonic-generation microscopy

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Abstract

The recent demonstration of high-brightness light-emitting-diodes and laser diodes with InGaN multiple-quantum-wells (MQWs) active regions has established the III-V nitrides as key materials for optoelectronics operating in the green-ultraviolet (UV) wavelength range.

© 2000 Optical Society of America

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