Abstract
Significant advances have been made in recent years in the fabrication of high power diode lasers utilizing the "aluminum free" InGaAsP/ GaAs material system,1−3 which has some advantages over the more commonly used Al-GaAs system.
© 2000 Optical Society of America
PDF ArticleMore Like This
J. S. Major, W. E. Plano, and D. F. Welch
CMH4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994
M. Razeghi, J. Diaz, I. Eliashevich, X. He, E. Kolev, L. Wang, and D. Garbuzov
CMH5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994
S.G. Wallace, M.J. Brennan, P. Mascher, and H.K. Haugen
CTuA61 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000