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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWK35

Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells

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Abstract

It has been shown theoretically1 and experimentally2 that the built-in strain in semiconductor heterostructures can be tuned with hydrostatic pressure. The pressure induced strain arises due to differences in compressibility of the materials composing a heterostructure.

© 2000 Optical Society of America

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