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Conferences > CLEO > 2000 > CWM > CWM3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWM3

P-N junction formation in 3-and 4-inch indium gallium arsenide epitaxial wafers using a doped glass diffusion source

M. J. Lange, P. Dixon, and G. H. Olsen

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Abstract

Indium gallium arsenide (InGaAs) focal plane arrays (FPAs) are finding increasing use in diverse spectroscopic and imaging applications such as wavelength division monitoring (WDM), night vision, and the differentiation of clear ice from water on aircraft surfaces and roadways.

© 2000 Optical Society of America

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