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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper CWP2

Ultrashort (≤150 fs) carrier relaxation time of intersubband transition in AIGaN/GaN multiple quantum wells

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Abstract

Intersubband transition (ISBT) in semiconductor multiple quantum wells (MQWs) is a promising phenomenon for realizing ultrafast optoelectronic devices1 because of the very short relaxation time.

© 2000 Optical Society of America

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