Real-time process control of molecular beam epitaxy using in situ optical sensors

J. A. Roth

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CWR1

Real-time process control of molecular beam epitaxy using in situ optical sensors

J. A. Roth

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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Semiconductor Detector Technology (CWR)

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J. A. Roth, "Real-time process control of molecular beam epitaxy using in situ optical sensors," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CWR1.

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Abstract

Molecular beam epitaxy (MBE) is currently the most powerful and flexible growth method available for the fabrication of advanced device structures for nanoelectronics.

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