Observation of pbotoconductfve gain in InGaAs/inP p-i-n quantum well electroabsorption photodetectors

T. Corny

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2000),
paper CWR6

Observation of pbotoconductfve gain in InGaAs/inP p-i-n quantum well electroabsorption photodetectors

T. Corny

Conference on Lasers and Electro-Optics 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-634-6

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Semiconductor Detector Technology (CWR)

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T. Corny, "Observation of pbotoconductfve gain in InGaAs/inP p-i-n quantum well electroabsorption photodetectors," in Conference on Lasers and Electro-Optics, S. Brueck, R. Fields, M. Fejer, and F. Leonberger, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper CWR6.

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Abstract

I report the first observation of photoconductive gain in a p-i-n photodiode, and present a novel extended theory of photoconductivity that successfully describes these experimentally observed gains.

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