Characterization of GaAsSb/GaAs quantum wells for 1.3 urn VCSELs

M. Dinu; J.E. Cunningham; F. Quochi; J. Shah

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CMH2

Characterization of GaAsSb/GaAs quantum wells for 1.3 urn VCSELs

M. Dinu, J.E. Cunningham, F. Quochi, and J. Shah

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Microstructures and Guided Waves (CMH)

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M. Dinu, J. E. Cunningham, F. Quochi, and J. Shah, "Characterization of GaAsSb/GaAs quantum wells for 1.3 urn VCSELs," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CMH2.

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Abstract

GaAsSb/GaAs quantum wells grown on GaAs substrates are a potential active material for the monolithic growth of 1.3 μm VCSELs.¹

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