High Speed Ablation Etching and Microstructure Fabrication of Hexagonal GaN Using Femtosecond Laser

Kazue Ozono; Minoru Obara; Akira Usui; Haruo Sunakawa

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CMH4

High Speed Ablation Etching and Microstructure Fabrication of Hexagonal GaN Using Femtosecond Laser

Kazue Ozono, Minoru Obara, Akira Usui, and Haruo Sunakawa

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Microstructures and Guided Waves (CMH)

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K. Ozono, M. Obara, A. Usui, and H. Sunakawa, "High Speed Ablation Etching and Microstructure Fabrication of Hexagonal GaN Using Femtosecond Laser," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CMH4.

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Abstract

Wide-gap III-V nitride semiconductors based on GaN are most promising for fabrication of blue/UV LEDs, blue LDs and high temperature electronics.¹

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