Abstract
AlGaInN high power laser diodes (LDs) was fabricated on a thin epitaxially laterally overgrown GaN (ELO-GaN) substrate. The characteristics of LDs were improved by using ELO-GaN substrate. This is because ELO-GaN is quite effective to reduce dislocation density and to form good cleaved facets.
© 2001 Optical Society of America
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