Spontaneous polarization effects on the optical properties of piezo-strained InGaN quantum wells

L. -H. Peng; K. -T. Hsu; C. -W. Shih; C. -C. Chuo; C. -C. Chuo; J. -I. Chyi; J. -I. Chyi

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CThL57

Spontaneous polarization effects on the optical properties of piezo-strained InGaN quantum wells

L. -H. Peng, K. -T. Hsu, C. -W. Shih, C. -C. Chuo, and J. -I. Chyi

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Poster Session 3 (CThL)

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L. -. Peng, K. -. Hsu, C. -. Shih, C. -. Chuo, and J. -. Chyi, "Spontaneous polarization effects on the optical properties of piezo-strained InGaN quantum wells," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CThL57.

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Abstract

Rapid development in the epitaxial growth, doping control, and device processing on group III nitride has brought in a plethora of research activity.

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