Abstract
Recently, AIGalnAs and InGaAsN have received much interest as materials for 1.3micron laser applications in competition with traditional InGaAsP. Both AIGalnAs and InGaAsN have the advantage of large conduction band offsets leading to superior electron confinement.1,2 We compare the gain and transparency carrier density at two temperatures to determine best the modulation response as well as the lowest possible threshold carrier density for uncooled laser applications.
© 2001 Optical Society of America
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