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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CThX2

Increasing the sensitivity of laser ultrasonic detection in GaAs photo-EMF configuration under external dc bias

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Due to simplicity and robustness adaptive photodetectors based on photo-EMF effect are considered promising for various applications, and in particular for laser ultrasonic detection2–Fig. 1. The most important drawback of these photodetectors is relatively low current response: ≤ 10−3A/W for typical GaAs devices with several tens of interference fringes in the interelectrode spacing.

© 2001 Optical Society of America

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