Abstract
The recent measurement (ns excitation) of high optical nonlinearity in Si nanoclusters has generated interest in its potential use as an optical switch.1 The study of the nonlinear optical properties of Si nanoclusters (NC’s) made by laser ablation and ion implantation techniques is motivated by the need for materials that exhibit large values of the real part of the third order nonlinear susceptibility (χ(3)Re,).
© 2001 Optical Society of America
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