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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CTuH1

1.3μm InGaAsN VCSELs on GaAs Substrates

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Abstract

Commercial interest in developing inexpensive laser sources for 1.3 μm has led to intense efforts to demonstrate GaAs-based vertical-cavity surface-emitting lasers (VCSELs) at that wavelength. Tb date, results include devices based on InGaAsN quantum wells,1−3 GaAsSb quantum wells4 and InAs quantum dots.5

© 2001 Optical Society of America

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