Abstract
Commercial interest in developing inexpensive laser sources for 1.3 μm has led to intense efforts to demonstrate GaAs-based vertical-cavity surface-emitting lasers (VCSELs) at that wavelength. Tb date, results include devices based on InGaAsN quantum wells,1−3 GaAsSb quantum wells4 and InAs quantum dots.5
© 2001 Optical Society of America
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