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Conferences > CLEO > 2001 > CTuH > CTuH3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CTuH3

Temperature Dependence of Threshold Current in a 1.3 μm InGaAsN VCSEL: Theory and Experiment

H.C. Schneider, A.J. Fischer, W.W. Chow, J.F. Klem, and K.D. Choquctte

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Abstract

The InGaAsN quaternary alloy system is receiving a great deal of interest because of potential device applications in optical Communications. Advantages of this material system include emission at wavelengths optimal for transmission in optical fibers and close lattice match to GaAs.1

© 2001 Optical Society of America

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