Continuous Wave 1.3 µm InAs-InGaAs Quantum Dot VCSELs on GaAs Substrates

J. A. Lott; N. N. Ledentsov; N. N. Ledentsov; V. M. Ustinov; V. M. Ustinov; Zh. I. Alferov; Zh. I. Alferov; D. Bimberg; D. Bimberg

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2001),
paper CTuH5

Continuous Wave 1.3 µm InAs-InGaAs Quantum Dot VCSELs on GaAs Substrates

J. A. Lott, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov, and D. Bimberg

Conference on Lasers and Electro-Optics 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-662-1

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Long Wavelength VCSELS (CTuH)

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J. A. Lott, N. N. Ledentsov, V. M. Ustinov, Z. I. Alferov, and D. Bimberg, "Continuous Wave 1.3 µm InAs-InGaAs Quantum Dot VCSELs on GaAs Substrates," in Conference on Lasers and Electro-Optics, J. Kafka, K. Vahala, R. Williamson, and A. Willner, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper CTuH5.

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Abstract

Vertical cavity surface emitting lasers (VCSELs) emitting at 1.3 µm and integrated with GaAs- based microelectronic circuits have many potential applications in optical communication systems.

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