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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2001),
  • paper CTuO5

Origin of Emission Energy Blue Shift in a 1.3 μm GaAsSb Type-II Quantum Well

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Abstract

Semiconductor gain media in the 1.3 to 1.5 μm wavelength range are currently under intense investigation because of the important role of lasers in optical fiber communications. For vertical-cavity surface-emitting lasers (VCSELs), gain structures that can be epitaxially grown on GaAs substrates are of particular interest. One such system is the type-II GaAsSb/GaInAs/GaAs quantum well structure.1,2 For this gain structure, experiments found significant increase in the optical emission peak energy with increasing excitation. This blue shift is a serious concern because it is detrimental to long wavelength operation.

© 2001 Optical Society of America

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