Abstract
Semiconductor gain media in the 1.3 to 1.5 μm wavelength range are currently under intense investigation because of the important role of lasers in optical fiber communications. For vertical-cavity surface-emitting lasers (VCSELs), gain structures that can be epitaxially grown on GaAs substrates are of particular interest. One such system is the type-II GaAsSb/GaInAs/GaAs quantum well structure.1,2 For this gain structure, experiments found significant increase in the optical emission peak energy with increasing excitation. This blue shift is a serious concern because it is detrimental to long wavelength operation.
© 2001 Optical Society of America
PDF ArticleMore Like This
M. Dinu, J.E. Cunningham, F. Quochi, and J. Shah
CMH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001
L. J. Mawst, J. Y. Yeh, D. P. Xu, J. H. Park, J. Huang, A. Khandekar, T. F. Kuech, N. Tansu, I. Vurgaftman, and J. R. Meyer
CMBB6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006
F. Quochi, J.E. Cunningham, D.C Kilper, M. Dinu, and J. Shah
CTuH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001