Abstract

Recent advances in molecular beam epitaxy (MBE) have enabled the use of self-assembled semiconductor quantum dots (QDs) in optoelectronic devices. Previous research has yielded impressive laser diode results on GaAs, including (1) a record low room temperature threshold current density,¹ (2) the observation of an ultrasmall linewidth enhancement factor, α = 0.1,² (3) and the attainment of a 201-nm tuning range at low bias.³ In this presentation, we detail the first demonstration of self-assembled quantum dash laser diodes fabricated on InP (001) substrates. By dash, we mean the InAs islands are highly elongated in one dimension. Such self-assembled nanostructures grown by molecular beam epitaxy (MBE) offer a new path for realizing quantum wire lasers. In contrast, previous research on 1 D quantum wire semiconductor lasers has been based primarily on MOCVD regrowth into V-shaped grooves.⁴

© 2001 Optical Society of America