Abstract
Using a tuneable optical parametric oscillator we discovered that the interface between gallium and silica displays an exceptionally broadband nonlinearity. At temperatures several degrees below gallium’s melting point (~30°C) the reflectivity increases by up to 40% in response to 3 ns excitation pulses at wavelengths from 440 to 700 nm (Fig. 1). Fig. 2 shows how the reflectivity change depends on the excitation fluence, and that it saturates at about 6 mJ/cm2.
© 2001 Optical Society of America
PDF ArticleMore Like This
V.A. Fedotov, K.F. MacDonald, G.C. Stevens, S. Pochon, and N.I. Zheludev
QTuD3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2002
P. Petropoulos, H.S. Kim, D.J. Richardson, and N.I. Zhcludev
CWK42 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000
V. Albanis, S. Dhanjal, V. Emelyanov, P. Petropoulos, D.J. Richardson, and N.I. Zheludev
QME3 Quantum Electronics and Laser Science Conference (CLEO:FS) 1999