Abstract
We describe measurements of carrier energy relaxation in a set of InGaAs/GaAs with various sires resulting in energy level spacing (ΔE) ranging from - 65 meV to - 95 meV. We demonstrate (hat in all cases the relaxation is extremely rapid but slows with increasing AE.
© 2001 Optical Society of America
PDF ArticleMore Like This
M. Sugawara, N. Hatori, T. Akiyama, Y. Nakata, and H. Ishikawa
TuH3_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001
J.H.H. Sandmann, S. Grosse, J. Feldmann, H. Lipsanen, M. Sopanen, J. Tulkki, and J. Ahopelto
ThB.3 International Conference on Ultrafast Phenomena (UP) 1996
D. G. Cooke, F. A. Hegmann, Yu. I. Mazur, W. Q. Ma, X. Wang, Z. M. Wang, G. J. Salamo, M. Xiao, T. D. Mishima, and M. B. Johnson
TuB2 Optical Terahertz Science and Technology (OTST) 2005