Abstract
Rare earth doped semiconductors have been studies for more than a decade because of the possibility to develop compact and efficient electroluminescence devices.1,2 Previous work has mainly focused on the infrared (1.54 μm) emission from Er3+ ions in III-V’s and Si based materials for applications in optical communications. The recent observation of visible emission from RE doped GaN has spurred interest in this class of materials for applications in phosphor technology.3,4
© 2002 Optical Society of America
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