Formation of Quasi-regular Quantum Dots with Post-growth Thermal Annealing and Their Optical Characteristics in InGaN/GaN Quantum Wells

Yen-Sheng Lin; Kung-Jeng Ma; Cheng Hsu; Yi-Yin Chung; Chih-Wen Liu; Shih-Wei Feng; Yung-Chen Cheng; C.C. Yang; Hui-Wen Chuang; Cheng-Ta Kuo; Jian-Shihn Tsang; Thomas E. Weirich

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2002),
paper CFG6

Formation of Quasi-regular Quantum Dots with Post-growth Thermal Annealing and Their Optical Characteristics in InGaN/GaN Quantum Wells

Yen-Sheng Lin, Kung-Jeng Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, C.C. Yang, Hui-Wen Chuang, Cheng-Ta Kuo, Jian-Shihn Tsang, and Thomas E. Weirich

Conference on Lasers and Electro-Optics 2002

Long Beach, California United States
19–22 May 2002
ISBN: 1-55752-706-7

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Semiconductor Devices: 2 (CFG)

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Y. Lin, K. Ma, C. Hsu, Y. Chung, C. Liu, S. Feng, Y. Cheng, C. C. Yang, H. Chuang, C. Kuo, J. Tsang, and T. E. Weirich, "Formation of Quasi-regular Quantum Dots with Post-growth Thermal Annealing and Their Optical Characteristics in InGaN/GaN Quantum Wells," in Conference on Lasers and Electro-Optics, M. Fejer, F. Leonberger, J. Fujimoto, and S. Newton, eds., OSA Technical Digest (Optica Publishing Group, 2002), paper CFG6.

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Abstract

Quantum-dot (QD)-like structures have been observed in InGaN/GaN quantum wells (QWs). Such structures are formed because of the large lattice mismatch between InN and GaN. With high-resolution transmission electron microscopy (HRTHM), randomly distributed clusters of indium aggregation and phase-separated InN were observed. The cluster structures form potential minimums (called localized states) for trapping carriers for efficient photon emission.

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