Abstract
Materials with ultrafast response times and high optical nonlinearities are crucial for future Tbit/s fiber-based communication systems. One possibility to achieve ultrafast response times is using defect-rich bulk and low-dimensional 111/V materials, which can be realized by molecular beam epitaxy (MBE) at low growth temperatures (LT). In contrast to well-established LT GaAs/AlAs, the absorption edge of LT GalnAs/ AllnAs MQWs can be tuned to the crucial 1.55-µm wavelength. Whereas in LT-GaAs:Be response times are as short as I 00 fs, 1 up to now the optical response of Be-doped LT GalnAs/AllnAs MQWs was much slower.2 In this work, we report for the first time an ultrafast absorption recovery time in LT-Ga inAs/ AllnAs MQWs of only 230 fs at the communication wavelength of 1.55 µm.
© 2002 Optical Society of America
PDF ArticleMore Like This
K. Biermann, D. Nickel, T. Elsaesser, and H. Künzel
CTuH4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000
J. D. Heber, C. Gmachl, H. M. Ng, A. Y. Cho, and S.-N. G. Chu
CFH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002
Tsuyoshi Okuno, Yasuaki Masumoto, Yasushi Sakuma, Yuuichi Hayasaki, Shinjirou Kadono, and Hiroshi Okamoto
TuH3_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001