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Conferences > CLEO > 2002 > CThO > CThO53
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CThO53

Broadening of Gain Spectrum Using InGaAs/lnAIGaAs Multiple Width Quantum Wells at 1550 nm

M. Jain, C. Bryce, C.N. Ironside, and S. Pinches

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Abstract

We have investigated multiple width quantum well (MWQW) InGaAs/lnAIGaAs material as a means of broadening the gain spectrum when compared with wafer structure with conventional identical width quantum well (IWQW). MWQW semiconductor laser material consists of quantum wells of different widths in the same active region, emitting light at different wavelengths

© 2002 Optical Society of America

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