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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CThO58

Effect of Excited State Transitions and Auger Recombination on the T0 of InAs/InGaAs Quantum Dot Lasers

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Abstract

Quantum Dot (QD) lasers were initially predicted to have a very high value of characteristic temperature (T0), 1 however, experimental data has shown that T0 is actually in the range of 60-75 K near room temperature.2,3 In this talk we will investigate the processes that contribute to this lower T0 by using a theoretical model. This model includes occupation of the excited states in the QD, carrier occupation of the wetting layer. Auger recombination, homogeneous and inhomogeneous broadening. Using this model we also investigate the role that dot density and the number of dot layers play in determining T0.

© 2002 Optical Society of America

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