Abstract
It is highly desirable to integrate monolithic microprocessors, network processors and optical transceiver arrays in mainstream CMOS technology for communications and signal processing on the same chip.1 The Ultra-Thin Silicon-on-Sapphire (UTSi®-SOS) process developed by Peregrine Semiconductor uses 100 nm silicon on top of fully insulating, optically transparent synthetic sapphire. The process has good thermal conductivity properties and thermal expansion coefficients well-matched to tlip-chip-bonded GaAs optical devices. It is one example of a Silicon-on- Sapphire CMOS process with great potential for photonic integration.3 We present the design, simulation, fabrication and test of UTSi chips containing several test circuits and subsystems useful for optical communications and interconnections.
© 2002 Optical Society of America
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