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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CTuQ2

Temperature resolved 1.3 μm AlGalnAs MQW Laser Measurements: Transparency Current Density, Gain and Carrier Lifetime

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Abstract

In recent years there has been growing interest in the development of long wavelength (1.3 μm -1.5 μm) laser diodes for use in uncooled data- communications applications. With the increasing modulation rates that such systems are being operated at, the device temperature dependence becomes increasingly critical.1−2

© 2002 Optical Society of America

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