Abstract

A key ingredient in the recent demonstrations of 1300 nm InGaAsN quantum well edge emitting and vertical cavity surface emitting lasers is optimization of the optical properties of the InGaAsN material.¹⁻³ The challenge to obtaining acceptable device performance lies in optimizing the InGaAsN composition and growth conditions so as to incorporate the required amount of N without simultaneously degrading the optical quality of the materia] through the introduction of high densities of defects. In this work, we examine the effects of composition, growth temperature, and annealing of device-quality InGaAsN quantum wells on the room temperature photoluminescence (PL) of these structures. Correlations with device performance will also be presented.

© 2002 Optical Society of America