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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CTuQ4

Temperature Sensitivity Analysis of High- performance InGaAs(N) (λ = 1.185 - 1.3 μm) Quantum Well Lasers

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Abstract

InGaAsN QW active lasers, proposed by Kondow et. al., 1 have shown strong potential for temperature-insensitive optical transmitters at λ = 1.3 μm used in metropolitan optical network systems. Here we demonstrate low-threshold-current MOCVD-grown diode lasers, as shown in Fig. 1, utilizing 60-Å In0.4Ga0.1As QW and 60-Å ln0.4Ga0.6As0.995N0.005 QW active layers, with strain compensating GaAs0.8P0.15 (tensile) barriers and a (tensile) InGaP (Δa/a = -700 ppm) buffer layer.2 We find the use of a tensile-strained InGaP buffer layer to be crucial for the growth of the high-In-content InGaAs(N) QWs on a thick high-Al-content AlGaAs bottom-cladding layers, as evident from the significant improvement in the luminescence from incorporation of the buffer layer.2

© 2002 Optical Society of America

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