Abstract

There is now a very high demand for low cost, 1.3-1.6 μm lasers that are essential for the rapid expansion of optical metro area networks (MANs). The requirements for these lasers are a significant operating temperature range (-10 to 90°C), emission spectra over 1.3-1.6 μm, and moderate power (>10 mW). There is also a significant interest in higher power lasers as Raman pumps to greatly increase the available bandwidth. InP-based lasers have serious shortcomings that hinder their ability to cover the 1.3-1.6 μm wavelength range, ¹ both for low cost vertical- cavity surface-emitting lasers (VCSELs) and high-power Raman pumps. Recent work on GaAs-based lasers with nitrogen has demonstrated promising results in light of the considerable improvement in thermal properties, the advantages of GaAs-based processing techniques, and the superior DBR (Distributed Bragg Reflector) mirror technology available for VCSELs.

© 2002 Optical Society of America